P.03

All Rights Reserved Copyright (C) SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. 2002

Password Vol.02-06-e MR2000 Series

2-3

Equivalent Circuit and Appearance

3-1

Main Switching Device - High-speed IGBT (MR2900 Series)

The unique (patented) structure of the Shindengen high-speed IGBT provides both high-speed

switching and low saturation voltage in a single device, thus also permitting its use in switching

power supplies. This newly developed high-speed IGBT is positioned between the MOSFET and

the bipolar transistor (Fig.3).

Fig.4 shows a comparison of losses in the 900V resistant switching device in the worldwide

partial resonance power supply. The loss curve is comparatively flat in relation to the wide range

of input voltage, and as such the device is optimized for use with a variety of international input

voltages.

3

Features

Fig.3 Comparison of Switching Devices

Fig.1 Equivalent Circuit

Fig.2 Appearance

5

4

3

2

1

6

7

Q1

GND

Z/C

F/B

Vin

Vcc

Source/Emitter

Drain/Collector

IC1

MOSFET

High-speed

IGBT

IGBT

BJT

Device

Symbol

Drive

Voltage

Voltage

Voltage

Current

ON loss

Small

Small

Large

Large

Switching loss