| 전자부품 데이터시트 검색엔진 |
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LOG200 데이터시트(PDF) 28 Page - Texas Instruments |
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LOG200 데이터시트(HTML) 28 Page - Texas Instruments |
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28 / 42 page ![]() 7.4.2 Layout Example + – + – + – I2 I1 PD Bias IBIAS VCM + – REFGND + – 2.5V 1.65V REF25 REF165 + – REFA OUTA OUTB –IN +IN VS+ VS– VS+ 1 A IREF I2 I1 R1 R2 ADC INN INP C5 R3 R4 VREF C4 C3 3.3V 1.65V 5V C1 C7 330pF Ceramic 1.65V C6 33pF Ceramic 2.5V –5V C2 LOG200 2.5V RBIAS CBIAS Footprint Photodiode C8 220pF Ceramic Figure 7-10. LOG200 Example Circuit GND GND GND GND INP INN R 3 R 4 C 5 C 3 C 4 I1 VCM I2 4 IREF 1 2 3 OUTB OUTA REFA 9 REF165 12 11 10 PAD R BIAS V S– C 1 REF165 V CM Use guard traces to shield the input signal Place bypass capacitors as close to device as possible Consider using thermal vias for heatsinking If I2 is not driven by IREF, I2 should also be guarded REF165 GND C 2 V S+ R 2 R 1 OUTA OUTA Cutouts on ground planes underneath the device can reduce stray capacitance and leakage REF25 Photodiode REF25 If diode capacitance is very high, a CBIAS capacitance to GND can be necessary for stability C 6 C 7 C 8 GND Figure 7-11. LOG200 Example Layout LOG200 SBOSA28A – AUGUST 2023 – REVISED DECEMBER 2024 www.ti.com 28 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: LOG200 |
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