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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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HT666 데이터시트(PDF) 1 Page - Hi-Sincerity Mocroelectronics |
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HT666 데이터시트(HTML) 1 Page - Hi-Sincerity Mocroelectronics |
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1 / 4 page  HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6464 Issued Date : 1993.09.07 Revised Date : 2005.02.15 Page No. : 1/4 HT666 HSMC Product Specification HT666 NPN EPITAXIAL PLANAR TRANSISTOR Description The HT666 is designed for general purpose amplifier and high-speed,medium- power switching applications. Features • High Frequency Current Gain • High Speed Switching Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (T A=25°C) ............................................................................................................... 625 mW • Maximum Voltages and Currents (T A=25°C) BV CBO Collector to Base Voltage ......................................................................................................................... 75 V BV CEO Collector to Emitter Voltage...................................................................................................................... 40 V BV EBO Emitter to Base Voltage .............................................................................................................................. 6 V I C Collector Current ........................................................................................................................................ 600 mA Electrical Characteristics (T A=25°C) Symbol Min. Typ. Max. Unit Test Conditions BV CBO 75 - - V I C=10uA *BV CEO 40 - - V I C=100mA BV EBO 6- - V I E=10uA I CBO - - 10 nA V CB=60V I CEX - - 10 nA V CB=60V, VEB(off)=3V I EBO - - 50 nA V EB=3V *V CE(sat)1 - - 300 mV I C=150mA, IB=15mA *V CE(sat)2 -- 1 V I C=500mA, IB=50mA *V BE(sat)1 -- 1.2 V I C=150mA, IB=15mA *V BE(sat)2 -- 2 V I C=500mA, IB=50mA *h FE1 35 --- V CE=10V, IC=100uA *h FE2 50 --- V CE=10V, IC=1mA *h FE3 75 --- V CE=10V, IC=10mA *h FE4 100 300 - V CE=10V, IC=150mA *h FE5 40 --- V CE=10V, IC=500mA *h FE6 50 --- V CE=1V, IC=150mA f T 300 - - MHz I C=20mA, VCE=20V, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% TO-92 |
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