BAS69 datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

BAS69 Series

2/9

Characteristics

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Continuous forward current

IFSM

Surge non repetitive forward current

Half wave, single phase 60 Hz

Tstg

Storage temperature range

-65 to +150

° C

Maximum operating junction temperature (1)

150

Maximum soldering temperature(1)

260

Pulse test: tp = 380 µs, δ < 2 %

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient(1)

SOT-323

550

° C/W

SOD-523, SOT-666

600

Epoxy printed circuit board with recommended pad layout

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = 1 V

0.035

µA

Tj = 125° C

Tj = 25° C

VR = 15 V

0.23

Tj = 125° C

100

(1)

Forward voltage drop

Tj = 25° C

IF = 1 mA

350

380

Tj = 125° C

230

260

Tj = 25° C

IF = 10 mA

500

570

Tj = 125° C

460

510

Pulse test: tp ≤ 250 ms, δ ≤ 2 %

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

Diode capacitance

VR = 0 V, F = 1 MHz

1.0

Forward resistance

IF = 5 mA, F = 100 MHz

Ω

Series inductance

1.5

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