Nexperia

PDTC144WM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

6. Ordering information

Table 3. Ordering information

Package

Type number

Name

Description

Version

PDTC144WM

DFN1006-3

plastic, leadless ultra small package; 3 terminals; 0.35 mm

pitch; 1 mm x 0.6 mm x 0.48 mm body

SOT883

7. Marking

Table 4. Marking codes

Type number

Marking code

PDTC144WM

DD

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

-10

40

V

IO

output current

-

100

mA

ICM

peak collector current

tp ≤ 1 ms; single pulse

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] [2] -

-

500

K/W

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.

PDTC144WM

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© Nexperia B.V. 2024. All rights reserved

Product data sheet

18 October 2024

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