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ST662AB 데이터시트(PDF) 11 Page - STMicroelectronics

부품명 ST662AB
상세설명  DC-DC converter from 5V to 12V, 0.03A for flash memory programming supply
PDF  20 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST662AB 데이터시트(HTML) 11 Page - STMicroelectronics

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ST662AB - ST662AC
Application circuit
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7
Application circuit
Based on fast charge/discharge of capacitors, this circuit involves high di/dt values limited
only by RON of switches. This implies a critical layout design due to the need to minimize
inductive paths and place capacitors as close as possible to the device.
A good layout design is strongly recommended for noise reason. For best performance, use
very short connections to the capacitors and the values shown in Table 6.
C3 and C4 must have low ESR in order to minimize the output ripple. Their values can be
reduced to 2µF and 1µF, respectively, when using ceramic capacitors, but must be of 10µF
or larger if aluminium electrolytic are chosen.
C5 must be placed as close to the device as possible and could be omitted if very low output
noise performance are not required.
Figure 15. and Figure 16. show, respectively, our EVALUATION kit layout and the relatively.
Figure 15.
KIT Lay-out
Figure 16.
Electrical schematic



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