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PPC440SPE-RNB667C 데이터시트(PDF) 72 Page - Applied Micro Circuits Corporation |
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PPC440SPE-RNB667C 데이터시트(HTML) 72 Page - Applied Micro Circuits Corporation |
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72 / 80 page ![]() PowerPC 440SPe Embedded Processor 72 AMCC Proprietary Revision 1.23 - Sept 21, 2006 Preliminary Data Sheet DDR SDRAM Write Operation The following timing chart shows the relationship between the signals involved in a DDR write operation. Figure 8. DDR SDRAM Write Cycle Timing DDR SDRAM Read and Write I/O Timing—TSA and THA Note 1: Clock speed is 333 MHz. TSA and THA are referenced to MemClkOut. Note 2: Memory clock signal is shifted by 90 ° from the internal clock. Table 17. DDR SDRAM Read and Write I/O Timing—TSA and THA Signal Name TSA (ns) THA (ns) Minimum Minimum MemAddr00:12 1.32 1.2 BA0:1 1.15 1.49 BankSel0:3 1.12 1.52 ClkEn0:3 1.29 1.45 CAS 1.24 1.14 RAS 1.29 1.48 WE 1.35 1.43 DQS MemData PLB Clk MemClkOut Addr/Cmd TSA THA TDS TSD THD TSD THD TSA = Setup time for address and command signals to MemClkOut THA = Hold time for address and command signals from MemClkOut TDS = Delay from rising/falling edge of clock to the rising/falling edge of DQS TSD = Setup time for data signals (minimum time data is valid before rising/falling edge of DSQ) THD = Hold time for data signals (minimum time data is valid after rising/falling edge of DSQ) |
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