BCW60C datasheet(2/2 Pages) DIOTEC

2 / 2 page

BCW60A ... BCW60D

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VCEsat

–

120 mV

200 mV

250 mV

550 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.25 mA

IC = 50 mA, IB = 1.25 mA

VBEsat

–

700 mV

830 mV

850 mV

1050 mV

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

IC = 50 mA, VCE = 1 V

VBE

–

550 mV

–

520 mV

650 mV

780 mV

–

750 mV

–

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 125°C, (E open)

ICB0

–

20 nA

20 µA

Emitter-Base cutoff current

VEB = 4 V, (C open)

IEB0

–

20 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

100 MHz

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCBO

–2 pF

–

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 10 V, IC = ic = 0, f = 1 MHz

CEBO

–

11 pF

–

Noise figure – Rauschzahl

VCE = 5 V, IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

–

2 dB

6 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 420 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCW61A ... BCW61D

Marking - Stempelung

BCW60A = AA

BCW60B = AB

BCW60C = AC

BCW60D = AD

Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

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