F25L016A datasheet(21/31 Pages) ESMT

21 / 31 page

ESMT

F25L016A

Elite Semiconductor Memory Technology Inc.

Publication Date: Mar. 2007

Revision: 1.2

21/31

ELECTRICAL SPECIFICATIONS

Absolute Maximum Stress Ratings

(Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the

device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure

to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V

Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C

Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

Output shorted for no more than one second. No more than one output shorted at a time.

AC CONDITIONS OF TEST

Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . . . . . CL = 15 pF for ≧75MHz

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .CL = 30 pF for ≦50MHz

See Figures 19 and 20

TABLE 4: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V ; TA=0~70oC

Limits

Symbol

Parameter

Min

Max

Units

Test Conditions

IDDR

Read Current

CE =0.1 VDD/0.9 VDD@33 MHz, SO=open

IDDW

Program and Erase Current

CE =VDD

ISB

Standby Current

µA

CE =VDD, VIN=VDD or VSS

ILI

ILO

Input Leakage Current

Output Leakage Current

µA

VIN=GND to VDD, VDD=VDD Max

VOUT=GND to VDD, VDD=VDD Max

VIL

VIH

Input Low Voltage

Input High Voltage

0.7 VDD

0.8

VDD=VDD Min

VDD=VDD Max

VOL

VOH

Output Low Voltage

Output High Voltage

VDD-0.2

0.2

IOL=100 µA, VDD=VDD Min

IOH=-100 µA, VDD=VDD Min

TABLE 5 : RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ

VDD Min to Read Operation

µs

TPU-WRITE

VDD Min to Write Operation

µs

This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 6: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

COUT

Output Pin Capacitance

VOUT = 0V

12 pF

CIN

Input Capacitance

VIN = 0V

6 pF

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

F25L016A 데이터시트(PDF) 21 Page - Elite Semiconductor Memory Technology Inc.

F25L016A 데이터시트(HTML) 21 Page - Elite Semiconductor Memory Technology Inc.

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

데이터시트 다운로드

링크 URL