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6N60-BTA3-R 데이터시트(PDF) 2 Page - Unisonic Technologies

부품명 6N60-BTA3-R
상세설명  6.2 Amps, 600/650 Volts N-CHANNEL MOSFET
PDF  7 Pages
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제조업체  UTC [Unisonic Technologies]
홈페이지  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

6N60-BTA3-R 데이터시트(HTML) 2 Page - Unisonic Technologies

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6N60
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 7
www.unisonic.com.tw
QW-R502-117.A
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
6N60-A
600
V
Drain-Source Voltage
6N60-B
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
6.2
A
TC = 25°C
6.2
A
Continuous Drain Current
TC = 100°C
ID
3.9
A
Pulsed Drain Current (Note 1)
IDM
24.8
A
Single Pulsed (Note 2)
EAS
440
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
13
mJ
Power Dissipation
PD
62.5
W
Junction Temperature
TJ
+150
℃
Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction-to-Ambient
θJA
62
°C/W
Junction-to-Case
θJC
2
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
6N60-A
600
V
Drain-Source Breakdown Voltage
6N60-B
BVDSS
VGS = 0V, ID = 250µA
650
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
µA
Forward
VGS = 30V, VDS = 0V
100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 250 µA, Referenced to 25°C
0.53
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
1.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
770 1000 pF
Output Capacitance
COSS
95
120
pF
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
10
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
20
50
ns
Turn-On Rise Time
tR
70
150
ns
Turn-Off Delay Time
tD(OFF)
40
90
ns
Turn-Off Fall Time
tF
VDD=300V, ID =6.2A, RG =25Ω
(Note 4, 5)
45
100
ns
Total Gate Charge
QG
20
25
nC
Gate-Source Charge
QGS
4.9
nC
Gate-Drain Charge
QGD
VDS=480V, ID=6.2A, VGS=10 V
(Note 4, 5)
9.4
nC



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