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AT636 데이터시트(PDF) 4 Page - Power Semiconductors |
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AT636 데이터시트(HTML) 4 Page - Power Semiconductors |
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4 / 4 page ![]() AT636 PHASE CONTROL THYRISTOR FINAL SPECIFICATION feb 97 - ISSUE : 03 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by ON-STATE CHARACTERISTIC Tj = 125 °C 0 1000 2000 3000 4000 5000 6000 0.6 1.1 1.6 On-state Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 125 °C 0 5 10 15 20 25 30 35 40 1 10 100 n° cycles ANSALDO All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. |
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