| 전자부품 데이터시트 검색엔진 |
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HV830LG-G 데이터시트(PDF) 2 Page - Supertex, Inc |
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HV830LG-G 데이터시트(HTML) 2 Page - Supertex, Inc |
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2 / 6 page ![]() 2 HV830 Absolute Maximum Ratings Ordering Information -G indicates the package is RoHS compliant - “Green” Device Package Option 8-Lead SOIC HV830 HV830LG HV830LG-G Parameter Value Supply voltage, V DD -0.5 to +10V Output voltage, V CS -0.5 to +120V Power dissipation 400mW Storage temperature -65OC to +150OC Operating temperature -25OC to +85OC Recommended Operating Conditions Symbol Parameter Min Typ Max Unit Conditions V DD Supply voltage 2.0 - 9.5 V --- f EL VA-B output drive frequency - - 1.5 KHz --- T A Operating temperature -25 - +85 OC --- DC Electrical Characteristics (V IN = 3.0V, RSW = 1.0MΩ, REL = 3.3MΩ, TA = 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions R DS(ON) ON resistance of switching transistor - 2.0 4.0 Ω I = 100mA V CS Output voltage - regulation 90 100 110 V V DD = 2.0V to 9.5V V A - VB Output peak-to-peak voltage 180 200 220 V V DD = 2.0V to 9.5V I DDQ Quiescent V DD current - diabled - 30 - nA R SW-Osc = Low I DD V DD supply current - 100 150 µA V DD = 3.0V. See Fig.1 I IN Input current including inductor current - 35 40 mA V DD = 3.0V. See Fig.1 V CS Output voltage on V CS -95 - V V DD = 3.0V. See Fig.1 f EL V A - VB output drive frequency 220 250 280 Hz V DD = 3.0V. See Fig.1 f SW Inductor switching frequency 55 65 75 KHz V DD = 3.0V. See Fig.1 D Switching transistor duty cycle - 88 - % --- Pin Configuration 1 2 3 4 8 7 6 5 VDD RSW-Osc CS LX REL-Osc VA VB GND 8-Lead SOIC (top view) Product Marking Y = Last Digit of Year Sealed WW = Week Sealed L = Lot Number = “Green” Packaging YWW HV830 LLLL Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. |
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