M58PR001LE datasheet(66/119 Pages) STMICROELECTRONICS

66 / 119 page

Program and erase times and endurance cycles

M58PR256LE, M58PR512LE, M58PR001LE

66/119

Program and erase times and endurance cycles

The program and erase times and the number of program/ erase cycles per block are shown

in Table 23. Exact erase times may change depending on the memory array condition. The

best scenario is when all the bits in the block are at ‘0’ (pre-programmed). The worst

scenario is when all the bits in the block are at ‘1’ (not preprogrammed). Usually, the system

overhead is negligible with respect to the Erase time. In the M58PRxxxLE the maximum

number of program/erase cycles depends on the VPP voltage supply used.

Table 23.

Program/erase times and endurance cycles(1) (2)

Parameter

Condition

Min

Typ

Typical after

100 kW/E

cycles

Max

Unit

Erase

EFA block (4 KWord)

0.7

2.5

Main array block 128 KWord)

0.9

Program(3)

Single cell(4)

Word Program(5)

230

µs

Buffer Program

250

500

µs

Single word(4)

Word Program(5)

230

µs

Buffer Program

250

500

µs

Buffer (512 words) (Buffer

Program)

2.15

4.3

EFA block (4 KWord)

0.2

0.94

Main array block (128 KWord)

(Buffer Program)

0.55

1.1

Suspend Latency

Program

µs

Erase

µs

Program/Erase

cycles (per block)

Main array block

100 000

cycles

EFA block

100 000

Blank Check

Main array block

3.2

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