| 전자부품 데이터시트 검색엔진 |
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PI49FCT20807Q 데이터시트(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI49FCT20807Q 데이터시트(HTML) 2 Page - Pericom Semiconductor Corporation |
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2 / 6 page ![]() 2 PS8558B 09/24/04 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PI49FCT20807 1-10 Clock Buffer for NetworkingApplications Storage Temperature ...................................................... –65°Cto+150°C VDDVoltage ...................................................................... –0.5Vto+3.6V Input/Output Voltage(4) ....................................................... –0.5VtoVDD+0.5V DC Output Current ....................................................... –60mA to +60mA Power Dissipation ........................................................................ 500mW Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VDD = 2.5V, +25°C ambient and maximum loading. 3. VOH = VDD – 0.6V at rated current. 4. This value is limited to 3.6V maximum. s r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms t i n U V H I e g a tl o V H G I H t u p n I) s n i P t u p n I ( l e v e L H G I H c i g o L d e e t n a r a u G7 . 1— V V L I e g a tl o V W O L t u p n I) s n i P t u p n I ( l e v e L W O L c i g o L d e e t n a r a u G— 7 . 0 II t n e r r u C t u p n IV D D V ,. x a M = N I V = D D D N G r oV N I V = D D —— 1 ±mA V K I e g a tl o V e d o i D p m a l CV D D I ,. n i M = N I A m 8 1 – =— 7 . 0 –1 – V V H O e g a tl o V H G I H t u p t u OV D D V ,. n i M = N I V = H I V r o L I I H O A m 1 – =2 — — I H O A m 8 – =8 . 1 ) 3 ( — V L O e g a tl o V W O L t u p t u OV D D V ,. n i M = N I V = H I V r o L I I L O A m 1 =— — 4 . 0 I L O A m 8 =— 6 . 0 DC Electrical Characteristics (Over the Operating Range) Operating Range VINVoltage ......................................................................... –0.3Vto3.6V VDDVoltage ........................................................................... 2.5V±0.2V Industrial Temperature .................................................... –40°C to +85°C Input Frequency ............................................................. DC to 150 MHz Capacitive Loading ............................................................. 10pF to 25pF Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device. 2. Typical values are at VDD = 2.5V, +25°C ambient. 3. Per TTL driven input (VIN = VDD – 0.6V); all other inputs at VDD or GND. s r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms t i n U I Q D D y l p p u S r e w o P t n e c s e i u Q t n e r r u C V D D . x a M =V N I V r o D N G = D D —1 . 00 2 A µ ∆I D D r e p t n e r r u C y l p p u S H G I H L T T @ s t u p n I V D D . x a M =V N I V = D D V 6 . 0 – ) 3 ( —7 40 0 3 I D D t n e r r u C y l p p u S c i m a n y D ) 1 h p a r G e e S ( V D D & F p 5 1 , V 7 . 2 = d a o l m h o - 3 3 z H M 0 5 1— 6 3 1— A m PowerSupplyCharacteristics |
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