Rating and Characteristic Curves (ACPDV24V0-HF)

Comchip Technology CO., LTD.

REV:A

Page 2

V

V

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Electrical Characteristics (at TA=25°C unless otherwise noted)

IT = 1mA

V(BR)

VRWM

Reverse stand-off voltage

Reverse breakdown voltage

26.7

24

V

µA

VRWM = 24V

IPP = 5A, tp = 8/20µs

IR

Reverse leakage current

Clamping voltage

46

1

pF

IPP = 7A, tp = 8/20µs

VR = 0V, f = 1MHz

CJ

VC

54

Junction capacitance

Fig.2 - ESD Pulse Waveform

According to IEC 61000-4-2

30ns

t

60ns

0

10

90

100

0

10

20

40

5

15

25

30

35

Time, (

µs)

10

100

110

Fig.1 - 8/20µs Waveform per

IEC 61000-4-5

Time, (

ns)

tr=0.7~1ns

90

20

30

40

50

60

70

80

T2

T1

T

Front time: T1=1.25xT=8µs

Time to half-value: T2=20µs

SMD ESD Protection Diode

33

V

50

0

40

80

100

120

20

60

0

25

50

75

100

125

150

Fig.3 - Power Derating Curve

Ambient Temperature, Ta (°C)

AQW-JP015

VC