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STP12NM60N 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP12NM60N
상세설명  N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET
PDF  18 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP12NM60N 데이터시트(HTML) 5 Page - STMicroelectronics

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STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
15
9
60
10
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
10
40
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 10A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
360
3.5
20
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 10A
Tj = 150°C (see Figure 19)
530
5.20
20
ns
µC
A



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