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MPC8280 데이터시트(PDF) 475 Page - Freescale Semiconductor, Inc |
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MPC8280 데이터시트(HTML) 475 Page - Freescale Semiconductor, Inc |
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475 / 1386 page ![]() Memory Controller MPC8280 PowerQUICC II Family Reference Manual, Rev. 1 Freescale Semiconductor 11-55 Figure 11-42. GPCM Peripheral Device Basic Timing (ACS = 1x and TRLX = 0) 11.5.1.2 Chip-Select and Write Enable Deassertion Timing Figure 11-43 shows a basic connection between the MPC8280 and a static memory device. Here, CS is connected directly to CE of the memory device. The WE signals are connected to the respective W signal in the memory device where each WE corresponds to a different data byte. Figure 11-43. GPCM Memory Device Interface As Figure 11-45 shows, the timing for CS is the same as for the address lines. The strobes for the transaction are supplied by OE or WE, depending on the transaction direction (read or write). ORx[CSNT] controls the timing for the appropriate strobe negation in write cycles. When this attribute is asserted, the strobe is negated one quarter of a clock before the normal case. For example, when ACS = 00 and CSNT = 1, WE is negated one quarter of a clock earlier, as shown in Figure 11-44. Clock Address PSDVAL CS R/W(BCTL0) Data ACS = 11 ACS = 10 Address CE OE W Data MEMORY Data WE OE CS Address MPC8280 |
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