TYN1012RG datasheet(2/17 Pages) STMICROELECTRONICS

2 / 17 page

Characteristics

TN1215, TYN612, TYN812, TYN1012

2/17

DocID7475 Rev 11

Characteristics

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

Unit

TN1215-x00B

TN1215-x00H

(1) (2)

TN1215-

x00G(1)(2)

TYNx12(2)(3)

TYNx12T(2)(3)

IT(RMS)

On-state RMS current

(180° conduction angle)

TO-220AB ins.

D2PAK

DPAK

IPAK

Tc = 110 °C

IT(AV)

Average on-state current

(180° conduction angle)

ITSM

Non repetitive surge peak

on-state current

tp = 8.3 ms

Tjinitial = 25 °C

115

145

tp = 10 ms

110

140

I2tI2t value for fusing

Tjinitial = 25 °C

A2S

dI/dt

Critical rate of rise of on-

state current

IG = 2 x IGT, tr ≤ 100 ns

F = 60 Hz

Tj = 125 °C

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PG(AV) Average gate power dissipation

Tj = 125 °C

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

VRGM

Maximum peak reverse gate voltage

1. x00= 600, 800

2. Check Table 1 for devices availability

3. x= 6,8,10

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