This Data Sheet may be revised by subsequent versions

©2004 Eon Silicon Solution, Inc., www.essi.com.tw

or modifications due to changes in technical specifications.

1

EN25B32

Rev. C, Issue Date: 2007/06/21

FEATURES

• Single power supply operation

- Full voltage range: 2.7-3.6 volt

• 32 M-bit Serial Flash

- 32 M-bit/4096 K-byte/16384 pages

- 256 bytes per programmable page

• High performance

- 100MHz clock rate

• Low power consumption

- 5 mA typical active current

- 1

μA typical power down current

• Flexible Sector Architecture:

- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one

32-Kbyte, and sixty three 64-Kbyte sectors

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via

software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Byte program time: 7µs typical

- Page program time: 1.5ms typical

- Sector erase time: 300 to 800ms typical

- Chip erase time: 25 Seconds typical

• Lockable 512byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 16 pins SOP 300mil body width

- 8 pins SOP 200mil body width

- 8 contact VDFN

- 8 pins PDIP

- All Pb-free packages are RoHS compliant

• Commercial and industrial temperature

Range

GENERAL DESCRIPTION

The EN25B32 is a 32M-bit (4096K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to

256 bytes at a time, using the Page Program instruction.

The EN25B32 has sixty eight sectors including sixty three sectors of 64KB, one sector of 32KB, one

sector of 16KB, one sector of 8KB and two sectors of 4KB. This device is designed to allow either single

Sector at a time or full chip erase operation. The EN25B32 can protect boot code stored in the small

sectors for either bottom or top boot configurations. The device can sustain a minimum of 100K

program/erase cycles on each sector.

EN25B32

32 Mbit Serial Flash Memory with Boot and Parameter Sectors