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HE83R540 데이터시트(PDF) 11 Page - King blillion Electronics Co.,Ltd. |
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HE83R540 데이터시트(HTML) 11 Page - King blillion Electronics Co.,Ltd. |
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11 / 11 page ![]() KING BILLION ELECTRONICS CO., LTD 駿 億 電 子 股 份 有 限 公 司 HE83R540 HE80000 SERIES 11 V1.31E J. Important Note 1. For accessing any address large than 64KB, users must update TPP first, TPH then TPL. Only by this order, the pre-charge circuit of ROM will work correctly. 5us waiting is necessary before LDV instruction is executed since Data ROM is a low speed ROM. Users can not emulate this accessing process in ICE. So 5us delay should be added by firmware. 2. LCD driving circuit must be turn off before IC goes into sleep mode. 3. Please bonds the TSTP_P, RSTP_N and PRTD[7:0] with test point on PCB (can be soldered and probed) as you can, then KB can do some IC testing job on PCB. Please connect TSTP_P pin with zero ohm resistor(or copper wire which can be cut on PCB) normally for good ESD result. KB can pull low the TSTP_P pin by remove the zero ohm resistor . The following figure is an example (Testing point with through hole). 4. LV5 must small than 9.0 Volt. Otherwise IC may breakdown. K. Updated Record Version Date Section Original Content New Content V1.31 Jul 2, 2002 I Modify Application Circuit Add zero Ohm resistor to TSTP_P. |
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