G2002A

www.gofordsemi.com

TEL：0755-29961263

FAX:0755-29961466(A0601)

Figure 5. Capacitance

Figure 6. Source-Drain Diode Forward

Typical Characteristics TJ = 25ºC, unless otherwise noted

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

1

2

3

4

10V

4.5V

2.8V

2.7V

2.6V

2.5V

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

0

1

2

3

4

5

6

VDS= 5V

25℃

360

380

400

420

440

460

480

0

0.5

1

1.5

2

VGS= 4.5V

VGS= 10V

0

200

400

600

800

1000

1200

0

10

20

30

40

50

60

Ciss

Coss

Crss

0

2

4

6

8

10

0

5

10

15

20

VDD = 100V,

ID = 2A

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 3. Drain Source On Resistance

Figure 4. Gate Charge

ID-Drain Current（A）

Qg Gate Charge（nC）

VDS Drain-Source Voltage(V)

VSD, Source-to-Drain Voltage (V)

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

100℃

25℃