Absolute Maximum Ratings

PARAMETER

SYMBOL

Monolithic Transistor Array – SiS3045

Rev 1.1

20/10/17

VALUE

UNIT

Collector-to-Emitter Voltage

VCEO

15

V

Collector-to-Base Voltage

VCBO

20

V

Collector-to-Substrate Voltage (Note 1)

VCIO

20

V

Emitter-to-Base Voltage

VEBO

5

V

Collector Current

IC

50

mA

Maximum Power Dissipation (Any one transistor)

PD

300

mW

Operating Temperature Range

-

-55 to 125

°C

Maximum Junction Temperature

TJ

175

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC Electrical Characteristics T

A = 25°C unless otherwise stated

Collector to Base Breakdown Voltage

V(BR)CBO

IC = 10μA, IE= 0

20

60

-

V

Collector to Emitter Breakdown Voltage

V(BR)CEO

IC = 1mA, IB = 0

15

24

-

V

Collector-to-Substrate Breakdown

Voltage

V(BR)CIO

IC = 10μA, ICI = 0

20

60

-

V

Emitter to Base Breakdown Voltage

V(BR)EBO

IE = 10μA, IC= 0

5

7

-

V

Collector Cutoff Current

ICBO

VCB = 10V, IE = 0

-

0.002

40

nA

Collector Cutoff Current (Figure 2)

ICEO

VCE = 10V, IB = 0

-

FIG 2

0.5

µA

IC = 10mA

-

100

-

-

IC = 1mA

40

100

-

-

Forward Current Transfer Ratio

(Static Beta) (Note 3) (Figure 3)

hFE

VCE =3V

IC = 10µA

-

54

-

-

Input Offset Current for Matched Pair

Q1 and Q2. (Note 2) (Figure 4)

|IIO1 - IIO2|

VCE = 3V, IC = 1mA

-

0.3

2

µA

IE = 1mA

-

0.715

-

Base-to-Emitter Voltage (Note 2)

(Figure 5)

VBE

VCE = 3V

IE =10mA

-

0.800

-

V

Magnitude of Input Offset Voltage for

Differential Pair (Note 2) (Figures 5, 7)

|VBE1 - VBE2|

VCE = 3V, IC = 1mA

-

0.45

5

mV

Magnitude of Input Offset Voltage for

Isolated Transistors. (Note 2)

(Figures 5, 7)

|VBE3 - VBE4|

|VBE4 - VBE5|

|VBE5 - VBE3|

VCE = 3V, IC = 1mA

-

0.45

5

mV

Temperature Coefficient of Base-to-

Emitter Voltage (Figure 6)

ΔVBE

ΔT

VCE = 3V, IC = 1mA

-

-1.9

-

mV/°C

Collector-to-Emitter Saturation Voltage

VCES

IB = 1mA, IC = 10mA

-

0.23

-

V

Temperature Coefficient: Magnitude of

Input Offset Voltage (Figure 7)

|ΔVIO|

ΔT

VCE = 3V, IC = 1mA

-

1.1

-

µV/°C

 Notes: 1. The collector of each transistor is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be

connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal

transistor action. 2. Actual forcing current is via the emitter for this test.

 

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