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BAS29 데이터시트(PDF) 1 Page - TRANSYS Electronics Limited |
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BAS29 데이터시트(HTML) 1 Page - TRANSYS Electronics Limited |
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1 / 2 page ![]() SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage VR max. 90 V Repetitive peak forward current IFRM max. 600 mA Forward current IF max. 250 mA Junction temperature Tj max. 150 °C Forward voltage at IF = 50 mA VF < 0.84 V Reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA trr < 75 ns RATINGS (per diode) (at TA = 25°C unless otherwise specified) Limiting values Continuous reverse voltage VR max. 90 V Repetitive peak forward current IFRM max. 600 mA Repetitive peak reverse current IRRM max. 600 mA BAS29, BAS31, BAS35 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21 BAS35 – L22 1 2 3 1 2 3 1 2 3 BAS29 BAS31 BAS35 SOT-23 Transys Electronics LI M ITE D |
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