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FS10AS-06 데이터시트(PDF) 2 Page - Powerex Power Semiconductors

부품명 FS10AS-06
상세설명  Nch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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제조업체  POWEREX [Powerex Power Semiconductors]
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FS10AS-06 데이터시트(HTML) 2 Page - Powerex Power Semiconductors

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25
°C)
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
2100
35 7
2
101
35 7
2
102
35 7
2
10–1
100
101
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
tw = 10
ms
TC = 25°C
Single Pulse
100
ms
10ms
1ms
DC
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
VGS = 20V 10V 8V
7V
5V
6V
Tc = 25°C
Pulse Test
PD = 30W
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
VGS = 20V
5V
6V
10V 8V
Tc = 25°C
Pulse Test
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
m
Ω
mV
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
58
0.29
9.0
600
180
60
18
22
30
17
1.0
—
55
—
±0.1
0.1
4.0
78
0.39
—
—
—
—
—
—
—
—
1.5
4.17
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
ID = 1mA, VGS = 0V
VGS =
±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 5V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50
Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/
µs
PERFORMANCE CURVES



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