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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STTH20R04G 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH20R04G 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Rectifier Diode STTH20R04G www.iscsemi.com 1 FEATURES · Ultrafast recovery · Low power losses · High surge capability APPLICATIONS · Free wheeling diode · UPS,SMPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 50 A IF(peak) Peak working forward currentδ = 0.5, square wave TC = 135℃ 20 A IFSM Surge non repetitive forwardcurrent tp = 10 ms sinusoidal 150 A TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃ /W ELECTRICAL CHARACTERISTICS(Ta=25℃) (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MIN Typ MAX UNIT VF Forward voltage drop IF= 20A ;Tj=25℃ -- -- 1.70 V IF= 20A ;Tj=25℃ -- -- 1.35 V IR Reverse leakage current VR= VRWM;Tj=25℃ -- -- 20 uA VR= VRWM;Tj=150℃ -- -- 0.2 mA |
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