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GA200SA60UP 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 GA200SA60UP
상세설명  IGBT
PDF  3 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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GA200SA60UP 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISG2160
eq GA200SA60UP
IGBT
www.iscsemi.com
1
DESCRIPTION
· Low VCE(sat) for minimum on-stateconduction losses
· Very high current, fast switchingIGBT
· MOS Gate turn-on drive simplicity
APPLICATIONS
· AC motor speed control
· DC servo and robot drives
· Uninterruptible power supplies (UPS)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VGES
Gate-Emitter Voltage
±
20
V
IC
Collector Current-Continuous
@ TC=25℃
200
A
IC
Collector Current-Continuous
@ TC=117℃
100
A
ICM
Pulsed Collector Current@ TC=25℃
400
A
PD
Power Dissipation @TC=25℃
500
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.25
℃
/W


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