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GD50FSA120L2SF 데이터시트(PDF) 4 Page - StarPower Europe AG

부품명 GD50FSA120L2SF
상세설명  1200V/50A 6 in one-package
PDF  9 Pages
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제조업체  STARPOWER [StarPower Europe AG]
홈페이지  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD50FSA120L2SF 데이터시트(HTML) 4 Page - StarPower Europe AG

  GD50FSA120L2SF Datasheet HTML 1Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 2Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 3Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 4Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 5Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 6Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 7Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 8Page - StarPower Europe AG GD50FSA120L2SF Datasheet HTML 9Page - StarPower Europe AG  
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GD50FSA120L2SF
IGBT Module
©2024 STARPOWER Semiconductor Ltd.
7/31/2024
4/9
B01
Diode Characteristics T
H=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF
Diode Forward
Voltage
IF=50A,VGE=0V,Tvj=25
oC
1.60
2.05
V
IF=50A,VGE=0V,Tvj=125
oC
1.65
IF=50A,VGE=0V,Tvj=150
oC
1.65
Qr
Recovered Charge
VR=600V,IF=50A,
-di/dt=1166A/μs,LS=35nH,
VGE=-15V,Tvj=25
oC
4.96
μC
IRM
Peak Reverse
Recovery Current
41
A
Erec
Reverse Recovery
Energy
1.67
mJ
Qr
Recovered Charge
VR=600V,IF=50A,
-di/dt=1032A/μs,LS=35nH,
VGE=-15V,Tvj=125
oC
8.66
μC
IRM
Peak Reverse
Recovery Current
45
A
Erec
Reverse Recovery
Energy
3.24
mJ
Qr
Recovered Charge
VR=600V,IF=50A,
-di/dt=1014A/μs,LS=35nH,
VGE=-15V,Tvj=150
oC
9.21
μC
IRM
Peak Reverse
Recovery Current
45
A
Erec
Reverse Recovery
Energy
3.46
mJ
NTC Characteristics T
H=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
kΩ
∆R/R
Deviation of R100
TC=100
oC,R100=493.3Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
H=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
25
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
4.50
mΩ
RthJH
Junction-to-Heatsink (per IGBT)
Junction-to-Heatsink (per Diode)
1.050
1.600
K/W
F
Mounting Force Per Clamp
20
50
N
G
Weight of Module
24
g



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