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GD50FSX65L2SF 데이터시트(PDF) 4 Page - StarPower Europe AG

부품명 GD50FSX65L2SF
상세설명  650V/50A 6 in one-package
PDF  9 Pages
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제조업체  STARPOWER [StarPower Europe AG]
홈페이지  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD50FSX65L2SF 데이터시트(HTML) 4 Page - StarPower Europe AG

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GD50FSX65L2SF
IGBT Module
©2018 STARPOWER Semiconductor Ltd.
12/29/2018
4/9
Preliminary
Diode Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VF
Diode Forward
Voltage
IF=50A,VGE=0V,Tj=25
oC
1.55
2.05
V
IF=50A,VGE=0V,Tj=125
oC
1.50
IF=50A,VGE=0V,Tj=150
oC
1.45
Qr
Recovered Charge
VR=300V,IF=50A,
-di/dt=2420A/
μs,V
GE=-15V
Tj=25
oC
2.2
μC
IRM
Peak Reverse
Recovery Current
55
A
Erec
Reverse Recovery
Energy
0.55
mJ
Qr
Recovered Charge
VR=300V,IF=50A,
-di/dt=2420A/
μs,V
GE=-15V
Tj=125
oC
4.3
μC
IRM
Peak Reverse
Recovery Current
66
A
Erec
Reverse Recovery
Energy
1.10
mJ
Qr
Recovered Charge
VR=300V,IF=50A,
-di/dt=2420A/
μs,V
GE=-15V
Tj=150
oC
4.8
μC
IRM
Peak Reverse
Recovery Current
72
A
Erec
Reverse Recovery
Energy
1.27
mJ
NTC Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
R25
Rated Resistance
5.0
k
Ω
∆R/R
Deviation of R100
TC=100
oC,R
100=493.3
Ω
-5
5
%
P25
Power
Dissipation
20.0
mW
B25/50
B-value
R2=R25exp[B25/50(1/T2-
1/(298.15K))]
3375
K
B25/80
B-value
R2=R25exp[B25/80(1/T2-
1/(298.15K))]
3411
K
B25/100
B-value
R2=R25exp[B25/100(1/T2-
1/(298.15K))]
3433
K
Module Characteristics T
C=25
oC unless otherwise noted
Symbol
Parameter
Min.
Typ.
Max.
Unit
LCE
Stray Inductance
25
nH
RCC’+EE’
Module Lead Resistance,Terminal to Chip
4.50
m
Ω
RthJC
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per Diode-inverter)
0.527
0.825
0.580
0.907
K/W
RthCH
Case-to-Sink (per IGBT-inverter)
Case-to-Sink (per Diode-inverter)
Case-to-Sink (per Module)
0.571
0.892
0.058
K/W
F
Mounting Force Per Clamp
20
50
N
G
Weight of Module
24
g



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