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GD50PIX120C5SN 데이터시트(PDF) 7 Page - StarPower Europe AG |
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GD50PIX120C5SN 데이터시트(HTML) 7 Page - StarPower Europe AG |
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7 / 13 page ![]() GD50PIX120C5SN IGBT Module ©2020 STARPOWER Semiconductor Ltd. 2/18/2020 7/13 Preliminary Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 35 nH RCC’+EE’ RAA’+CC’ Module Lead Resistance,Terminal to Chip 4.00 3.00 m Ω RthJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per Diode-inverter) Junction-to-Case (per Diode-rectifier) Junction-to-Case (per IGBT-brake) Junction-to-Case (per Diode-brake) 0.520 0.793 0.808 0.742 1.760 K/W RthCH Case-to-Sink (per IGBT-inverter) Case-to-Sink (per Diode-inverter) Case-to-Sink (per Diode-rectifier) Case-to-Sink (per IGBT-brake) Case-to-Sink (per Diode-brake) Case-to-Sink (per per Module) 0.296 0.451 0.460 0.422 1.001 0.020 K/W M Mounting Torque, Screw:M5 3.0 6.0 N.m G Weight of Module 200 g |
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