| 전자부품 데이터시트 검색엔진 |
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GD600CUX65C2S 데이터시트(PDF) 4 Page - StarPower Europe AG |
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GD600CUX65C2S 데이터시트(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD600CUX65C2S IGBT Module ©2018 STARPOWER Semiconductor Ltd. 3/15/2018 4/9 Preliminary Diode Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IC=600A,VGE=0V,Tj=25 oC 1.55 2.00 V IC=600A,VGE=0V,Tj=125 oC 1.50 IC=600A,VGE=0V,Tj=150 oC 1.45 Qr Recovered Charge VR=300V,IF=600A, -di/dt=6000A/ μs,V GE=-15V Tj=25 oC 17.0 μC IRM Peak Reverse Recovery Current 205 A Erec Reverse Recovery Energy 4.00 mJ Qr Recovered Charge VR=300V,IF=600A, -di/dt=6000A/ μs,V GE=-15V Tj=125 oC 36.0 μC IRM Peak Reverse Recovery Current 300 A Erec Reverse Recovery Energy 9.30 mJ Qr Recovered Charge VR=300V,IF=600A, -di/dt=6000A/ μs,V GE=-15V Tj=150 oC 42.0 μC IRM Peak Reverse Recovery Current 330 A Erec Reverse Recovery Energy 10.5 mJ Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 20 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.35 m Ω RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.080 0.150 K/W RthCH Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) 0.025 0.048 0.010 K/W M Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 2.5 3.0 5.0 5.0 N.m G Weight of Module 300 g |
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