| 전자부품 데이터시트 검색엔진 |
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GD600CUY120C2S 데이터시트(PDF) 4 Page - StarPower Europe AG |
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GD600CUY120C2S 데이터시트(HTML) 4 Page - StarPower Europe AG |
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4 / 9 page ![]() GD600CUY120C2S IGBT Module ©2016 STARPOWER Semiconductor Ltd. 11/30/2016 4/9 SF0B Diode Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward Voltage IF=600A,VGE=0V,Tj=25 oC 1.65 2.10 V IF=600A,VGE=0V,Tj=125 oC 1.65 IF=600A,VGE=0V,Tj=150 oC 1.65 Qr Recovered Charge VCC=600V,IF=600A, -di/dt=5000A/ μs,V GE=-15V, Tj=25 oC 61.4 μC IRM Peak Reverse Recovery Current 280 A Erec Reverse Recovery Energy 20.9 mJ Qr Recovered Charge VCC=600V,IF=600A, -di/dt=5000A/ μs,V GE=-15V, Tj=125 oC 114 μC IRM Peak Reverse Recovery Current 415 A Erec Reverse Recovery Energy 43.1 mJ Qr Recovered Charge VCC=600V,IF=600A, -di/dt=5000A/ μs,V GE=-15V, Tj=150 oC 128 μC IRM Peak Reverse Recovery Current 443 A Erec Reverse Recovery Energy 50.0 mJ Module Characteristics T C=25 oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit LCE Stray Inductance 20 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip 0.35 m Ω RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.044 0.078 K/W RthCH Case-to-Heatsink (per IGBT) Case-to-Heatsink (per Diode) Case-to-Heatsink (per Module) 0.021 0.038 0.010 K/W M Terminal Connection Torque, Screw M6 Mounting Torque, Screw M6 2.5 3.0 5.0 5.0 N.m G Weight of Module 300 g |
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