Over Voltage Protection IC Datasheet

© 2024 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: GD. 06/13/24

LS0504EVT233

5V, 4A eFuse with Over Voltage and Over Current Protection

2

Absolute Maximum Rating (Reference to GND)

Notes:

1. Stress exceeding those listed “Absolute Maximum Ratings” may damage the device.

2. ESD HBM testing per JESD22-A114F

Symbol

Value

Units

IN, OUT

-0.3 to +30

V

ILIM

-0.3 to +6.5

V

ESD, Human Body Model (HBM)

±2000

V

Junction Temperature Range

-40 to +150

°C

Storage Temperature Range

-65 to +150

°C

Lead Temperature (Soldering 10s)

260

°C

Recommend Operating Conditions

Symbol

Value

Units

Input Voltage (IN)

+2.7 to +6

V

Junction Temperature Range

+125

°C

* Notes: The device is not guaranteed to function outside of the recommended operating conditions.

Symbol

Value

Units

Maximum Power Dissipation (T

A=25°C )

0.88

W

Thermal Resistance (

θ

JA)

142

°C/W

Thermal Resistance (

θ

JC)

74

°C/W

Notes:

1. Measured on JESD51-7, 4-Layer PCB.

2. The maximum allowable power dissipation is a function of the maximum junction temperature T

J_MAX,

the junction to ambient thermal resistance

θ

JA, and the ambient temperature TA. The maximum allowable

continuous power dissipation at any ambient temperature is calculated by P

D_MAX= (TJ_MAX-TA)/θJA. Exceeding

the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into

thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.

Thermal information

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

IN

Input Voltage Range

2.7

28

V

I

BIAS

Quiescent Current

200

260

µA

V

UV

Input Under-voltage Threshold

2.48

V

V

UVHYS

Input Under-voltage Hysteresis

180

mV

V

OV

Input Over-voltage Threshold

6.2

V

V

OV

Input Over-voltage Hysteresis

330

mV

R

DSON

Protection FET RON

50

mΩ

T

SS

Soft-start Slew Rate Time

230

µs

I

OUT

Continuous Output Current

0

3

A

R

Disch

OUT Discharging Resistance

V

IN=6.5V

80

Ω

T

SD

Thermal Shutdown Temperature

160

°C

T

HYS

Thermal Shutdown Hysteresis

40

°C

Electrical Characteristics (T

A = +25°C, VIN=5V, CIN=1μF, unless otherwise specified)