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DG140A12TCFS 데이터시트(PDF) 2 Page - StarPower Europe AG |
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DG140A12TCFS 데이터시트(HTML) 2 Page - StarPower Europe AG |
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2 / 12 page ![]() DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 2/12 B01 Absolute Maximum Ratings T C=25 oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ±20 V IC Collector Current @ TC=25 oC @ TC=100 oC 175 (1) 140 A ICM Pulsed Collector Current tp limited by Tvjmax 560 A PD Maximum Power Dissipation @ Tvj=175 oC 937 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V IF Diode Continuous Forward Current @ TC=25 oC @ TC=100 oC 175 (1) 140 A IFM Diode Maximum Forward Current tp limited by Tvjmax 560 A Discrete Symbol Description Values Unit Tvjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC M Mounting Torque, Screw M3 0.6 N.m (1) limited by bondwire |
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