GD660HTX75P6SB datasheet(1/10 Pages) STARPOWER

부품명	GD660HTX75P6SB

상세설명	750V/660A 6 in one-package

PDF	10 Pages

Scroll/Zoom	100%

제조업체	STARPOWER [StarPower Europe AG]

홈페이지	www.starpowereurope.com

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1 / 10 page

GD660HTX75P6SB

IGBT Module

11/9/2019

1/10

Preliminary

STARPOWER

SEMICONDUCTOR

IGBT

GD660HTX75P6SB

750V/660A 6 in one-package

General Description

STARPOWER IGBT Power Module provides ultra

low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as

hybrid and electric vehicle.

Features



Low VCE(sat) Trench IGBT technology



Low switching losses



6

μs short circuit capability



VCE(sat) with positive temperature coefficient



Maximum junction temperature 175

oC



Low inductance case



Fast & soft reverse recovery anti-parallel FWD



Isolated copper baseplate using DBC technology

Typical Applications



Automotive application



Hybrid and electric vehicle



Inverter for motor drive

Equivalent Circuit Schematic

유사한 부품 번호 - GD660HTX75P6SB

제조업체	부품명	데이터시트	상세설명
StarPower Europe AG	GD660HTX75P7HB	727Kb / 11P	750V/660A 6 in one-package 2/28/2022

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GD660HTX75P6SB 데이터시트(PDF) 1 Page - StarPower Europe AG

GD660HTX75P6SB 데이터시트(HTML) 1 Page - StarPower Europe AG

유사한 부품 번호 - GD660HTX75P6SB

유사한 설명 - GD660HTX75P6SB

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