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GD660HTX75P7HB 데이터시트(PDF) 3 Page - StarPower Europe AG

부품명 GD660HTX75P7HB
상세설명  750V/660A 6 in one-package
PDF  11 Pages
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제조업체  STARPOWER [StarPower Europe AG]
홈페이지  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD660HTX75P7HB 데이터시트(HTML) 3 Page - StarPower Europe AG

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GD660HTX75P7HB
IGBT Module
©2023 STARPOWER Semiconductor Ltd.
2/28/2022
3/11
B04
IGBT Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=300A,VGE=15V,
Tj=25
oC
1.25
1.50
V
IC=300A,VGE=15V,
Tj=150
oC
1.35
IC=300A,VGE=15V,
Tj=175
oC
1.40
IC=660A,VGE=15V,
Tj=25
oC
1.65
IC=660A,VGE=15V,
Tj=175
oC
2.15
VGE(th)
Gate-Emitter Threshold
Voltage
IC=6.40mA,VCE=VGE,
Tj=25
oC
5.0
5.7
7.0
V
IC=6.40mA,VCE=VGE,
Tj=175
oC
3.5
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
1.0
Ω
Cies
Input Capacitance
VCE=50V,f=100kHz,
VGE=0V
28.1
nF
Coes
Output Capacitance
1.20
nF
Cres
Reverse Transfer
Capacitance
0.79
nF
QG
Gate Charge
VCE =400V,IC =300A,
VGE=-8…+15V
2.01
μC
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.0Ω,LS=33nH,
VGE=±15V,
Tj=25
oC
126
ns
tr
Rise Time
76
ns
td(off)
Turn-Off Delay Time
373
ns
tf
Fall Time
81
ns
Eon
Turn-On Switching
Loss
15.1
mJ
Eoff
Turn-Off Switching
Loss
19.3
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.0Ω,LS=33nH,
VGE=±15V,
Tj=150
oC
155
ns
tr
Rise Time
85
ns
td(off)
Turn-Off Delay Time
423
ns
tf
Fall Time
153
ns
Eon
Turn-On Switching
Loss
22.8
mJ
Eoff
Turn-Off Switching
Loss
24.9
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.0Ω,LS=33nH,
VGE=±15V,
Tj=175
oC
159
ns
tr
Rise Time
88
ns
td(off)
Turn-Off Delay Time
438
ns
tf
Fall Time
183
ns
Eon
Turn-On Switching
Loss
25.4
mJ
Eoff
Turn-Off Switching
Loss
26.1
mJ
ISC
SC Data
tP≤6μs,VGE=15V,
TBD
A



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