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N2NF10 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 N2NF10
상세설명  N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET
PDF  13 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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N2NF10 데이터시트(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STN2NF10
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
100
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc=125°C
VDS = 30V, Tc=125°C
1
10
1
µA
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
24
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 1.2A
0.23
0.26
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
Forward transconductance
VDS =15V, ID=1.2A
2.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1MHz, VGS=0
280
45
20
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=80V, ID = 6A
VGS =10V
(see Figure 15)
10
2.5
4
14
nC
nC
nC



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