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FX6ASJ-3 데이터시트(PDF) 2 Page - Powerex Power Semiconductors

부품명 FX6ASJ-3
상세설명  Pch POWER MOSFET HIGH-SPEED SWITCHING USE
PDF  4 Pages
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제조업체  POWEREX [Powerex Power Semiconductors]
홈페이지  http://www.pwrx.com
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FX6ASJ-3 데이터시트(HTML) 2 Page - Powerex Power Semiconductors

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PRELIMINARY
Notice:
This
is not
a final
specification.
Some
parametric
limits
are
subject
to change.
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX6ASJ-3
HIGH-SPEED SWITCHING USE
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
–2
–3
–100
–5
–7
–101
–2
–3
–5
–7
–102
–2
–3
–5
–7
–101 –2
–102
–3 –5 –7
–2
–103
–3 –5 –7
–10–1
–2 –3 –5 –7
–2
tw = 10
µs
100
µs
1ms
10ms
DC
TC = 25°C
Single Pulse
0
–2
–4
–6
–8
–10
0
–2–4–6–8
–10
–3V
–3.5V
–2.5V
TC = 25°C
Pulse Test
PD = 35W
VGS =
–10V
–6V
–5V
–4V
0
–4
–8
–12
–16
–20
0
–4
–8
–12
–16
–20
–3V
–4V
VGS = –10V
PD = 35W
TC = 25°C
Pulse Test
–6V
–5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.41
0.45
–1.23
7.9
2420
152
69
14
18
156
58
–1.0
—
100
—
±0.1
–0.1
–2.0
0.53
0.59
–1.59
—
—
—
—
—
—
—
—
–1.5
3.57
—
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –3A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –3A, VGS = –10V, RGEN = RGS = 50
Ω
IS = –3A, VGS = 0V
Channel to case
IS = –6A, dis/dt = 100A/
µs
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.



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