| 전자부품 데이터시트 검색엔진 |
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2SC2482 데이터시트(PDF) 4 Page - Toshiba Semiconductor |
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2SC2482 데이터시트(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC2482 2006-11-09 4 Base-emitter voltage VBE (V) IC – VBE Safe Operating Area Collector current IC (mA) fT – IC Collector-base voltage VCB (V) Cob – VCB 100 0 0.2 80 20 0.4 0.6 0.8 Common emitter VCE = 10 V 25 1.0 Ta = 100°C 60 40 1.2 −25 Collector-emitter voltage VCE (V) *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 2 3 5 10 30 50 100 300 30 100 IC max (continuous) IC max (pulsed)* 1 ms 10 ms* 100 ms* DC operation Ta = 25°C 10 300 VCE max 500 ms* 300 μs* 30 500 0.3 300 50 30 10 1 3 10 100 100 5 1000 Common emitter Ta = 25°C 10 VCE = 20 V 5 30 50 0.3 30 5 3 1 1 3 10 100 10 0.5 100 IE = 0 f = 1 MHz Ta = 25°C |
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