| 전자부품 데이터시트 검색엔진 |
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2SC2703 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC2703 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 4 page ![]() 2SC2703 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ― ― 100 nA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA 30 ― ― V hFE (1) (Note) VCE = 2 V, IC = 100 mA 100 ― 320 DC current gain hFE (2) VCE = 2 V, IC = 800 mA 40 ― ― Collector-emitter saturation voltage VCE (sat) IC = 800 mA, IB = 80 mA ― ― 0.5 V Base-emitter voltage VBE VCE = 2 V, IC = 800 mA ― 0.9 1.5 V Transition frequency fT VCE = 2 V, IC = 100 mA ― 150 ― MHz Collector output capacitance Cob VCB = 10 V, f = 1 MHz ― 13 ― pF Note: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking C2703 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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