| 전자부품 데이터시트 검색엔진 |
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2SC2705 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC2705 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC2705 2006-11-09 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 150 V, IE = 0 ― ― 0.1 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 1 mA, IB = 0 150 ― ― V DC current gain hFE (Note) VCE = 5 V, IC = 10 mA 80 ― 240 Collector-emitter saturation voltage VCE (sat) IC = 10 mA, IB = 1 mA ― ― 1.0 V Base-emitter voltage VBE (sat) VCE = 5 V, IC = 10 mA ― ― 0.8 V Transition frequency fT VCE = 5 V, IC = 10 mA ― 200 ― MHz Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 1.8 ― pF Note: hFE classification O: 80 to 160, Y: 120 to 240 Marking C2705 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Characteristics indicator Part No. (or abbreviation code) |
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