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2SC2716 데이터시트(PDF) 2 Page - Toshiba Semiconductor |
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2SC2716 데이터시트(HTML) 2 Page - Toshiba Semiconductor |
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2 / 5 page ![]() 2SC2716 2007-11-01 2 y Parameter (typ.) (common emitter VCE = 6 V, IE = −1 mA, f = 1 MHz) Characteristics Symbol 2SC2716-R 2SC2716-O 2SC2716-Y Unit Input conductance gie 0.5 0.35 0.22 mS Input capacitance Cie 50 48 46 pF Output conductance goe 4 5 6.5 μS Output capacitance Coe 3.7 3.4 3.2 pF Forward transfer admittance ⎪yfe⎪ 36 36 36 mS Phase angle of forward transfer admittance θfe −1.6 −1.6 −1.6 ° Reverse transfer admittance ⎪yre⎪ 14 14 14 μS Phase angle of reverse transfer admittance θre −90 −90 −90 ° Marking |
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