2SC6061 datasheet(4/5 Pages) TOSHIBA

부품명	2SC6061

상세설명	Silicon NPN Epitaxial Type

PDF	5 Pages

Scroll/Zoom	100%

제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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4 / 5 page

2SC6061

2006-11-13

1000

0.001

1000

0.01

0.1

100

rth – tw

Pulse width tw (s)

Curves apply only to limited areas of

thermal resistance.

Single non-repetitive pulse Ta

= 25°C

Mounted on an FR4 board (glass-epoxy;

1.6 mm thick; Cu area, 645 mm

Safe Operating Area

0.001

0.1

1000

0.01

100

0.1

VCEO max

IC max (パルス)*

IC max (連続)

直流動作

Ta = 25 °C

100 ms※*

1 ms※

10 s※*

10 μs※

10 ms※

100 ms※

Collector -emitter voltage VCE (V)

※

Single non-repetitive pulse

= 25°C

Note that the curves for 100

ms, 10 s and DC operation

will be different when the

devices aren’t mounted on an

FR4 board (glass-epoxy, 1.6

mm thick, Cu area: 645 mm

2).

Single-device operation

These characteristic curves

must be de-rated linearly with

increase in temperature.

μs

(continuous)

IC max (pulsed)*

DC operation

IC max

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