2SJ167

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

2SJ167

High Speed Switching Applications

Analog Switch Applications

Interface Applications

• Enhancement-mode

• Complementary to 2SK1061

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−60

V

Gate-source voltage

±20

V

DC

−200

Drain current

Pulse

−800

mA

Drain power dissipation (Ta

= 25°C)

300

mW

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1E

Weight: 0.13 g (typ.)