2SC6079 datasheet(1/5 Pages) TOSHIBA

부품명	2SC6079

상세설명	Silicon NPN Epitaxial Type

PDF	5 Pages

Scroll/Zoom	100%

제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC6079

2007-06-07

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6079

Power Amplifier Applications

Power Switching Applications

Low collector saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A）

High-speed switching: tstg = 0.4 μs (typ)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

VCBO

160

V

Collector-emitter voltage

VCEX

160

V

Collector-emitter voltage

VCEO

80

V

Emitter-base voltage

VEBO

9

V

DC

IC

2.0

A

Collector current

Pulse

ICP

4.0

A

Base current

IB

1.5

A

Collector power dissipation

PC

1

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55～150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight:0.2g(typ)

1 : BASE

2 : COLLECTOR

3 : EMITTER

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