2SD2012 datasheet(1/5 Pages) TOSHIBA

부품명	2SD2012

상세설명	Silicon NPN Triple Diffused Type

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SD2012

2006-11-21

1

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SD2012

Audio Frequency Power Amplifier Applications

• High DC current gain: hFE (1) = 100 (min)

• Low saturation voltage: VCE (sat) = 1.0 V (max)

• High power dissipation: PC = 25 W (Tc = 25°C)

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

V

Collector-emitter voltage

VCEO

60

V

Emitter-base voltage

VEBO

7

V

Collector current

IC

3

A

Base current

IB

0.5

A

Ta = 25°C

2.0

Collector power

dissipation

Tc = 25°C

PC

25

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

유사한 부품 번호 - 2SD2012

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SD2012	165Kb / 3P	NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
STMicroelectronics	2SD2012	228Kb / 5P	NPN SILICON POWER TRANSISTOR
STMicroelectronics	2SD2012	127Kb / 5P	NPN SILICON POWER TRANSISTOR Oct-2003
Toshiba Semiconductor	2SD2012	133Kb / 5P	Audio Frequency Power Amplifier Applications
Inchange Semiconductor ...	2SD2012	83Kb / 3P	Silicon NPN Power Transistors

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유사한 설명 - 2SD2012

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SD1408	105Kb / 2P	SILICON NPN TRIPLE DIFFUSED TYPE
	2SC2793	211Kb / 2P	SILICON NPN TRIPLE DIFFUSED TYPE
	2SD641	92Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE
	2SC5368	133Kb / 4P	Silicon NPN Triple Diffused Type
	2SC5459	141Kb / 4P	Silicon NPN Triple Diffused Type
	2SC6034	180Kb / 5P	Silicon NPN Triple Diffused Type
Guangdong Kexin Industr...	2SC3138	37Kb / 1P	Silicon NPN Triple Diffused Type
KEC(Korea Electronics)	BF420	52Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE
KEC(Korea Electronics)	BF422	52Kb / 3P	SILICON NPN TRIPLE DIFFUSED TYPE
Toshiba Semiconductor	2N3055	186Kb / 2P	silicon NPN triple diffused type

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2SD2012 데이터시트(PDF) 1 Page - Toshiba Semiconductor

2SD2012 데이터시트(HTML) 1 Page - Toshiba Semiconductor

유사한 부품 번호 - 2SD2012

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