1SS424 datasheet(1/3 Pages) TOSHIBA

부품명	1SS424

상세설명	High-Speed Switching Applications

PDF	3 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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1SS424

2007-11-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS424

High-Speed Switching Applications

Low forward voltage

: VF (3) = 0.50 V (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

VRM

30

V

Reverse voltage

VR

20

V

Maximum (peak) forward current

IFM

300

mA

Average forward current

IO

200

mA

Surge current (10 ms)

IFSM

1

A

Power dissipation

P *

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55~125

°C

Operating temperature range

Topr

−40~100

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*:

Mounted on a glass-epoxy circuit board of 20 × 20 mm,

pad dimensions of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

VF (1)

―

IF = 1 mA

―

0.18

―

VF (2)

―

IF = 5 mA

―

0.23

―

Forward voltage

VF (3)

―

IF = 200 mA

―

0.42

0.5

V

IR (1)

―

VR = 10 V

―

30

Reverse current

IR (2)

―

VR = 20 V

―

50

μA

Total capacitance

CT

―

VR = 0, f = 1 MHz

―

20

―

pF

Equivalent Circuit (Top View)

Marking

S8

JEDEC

―

JEITA

―

TOSHIBA

1-1G1A

Weight: 1.4 mg (typ.)

Unit: mm

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