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MP6901 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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MP6901 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 7 page ![]() MP6901 2004-07-01 1 TOSHIBA Power Transistor Module Silicon Epitaxial Type (Six Darlington Power Transistors in One) MP6901 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (6-device operation) : PT = 5 W (Ta = 25°C) • High collector current: IC (DC) = ±4 A (max) • High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Rating Characteristics Symbol NPN PNP Unit Collector-base voltage VCBO 100 −100 V Collector-emitter voltage VCEO 80 −80 V Emitter-base voltage VEBO 5 −5 V IC 4 −4 Collector current ICP 6 −6 A Continuous base current IB 0.4 −0.4 A Collector power dissipation (1-device operation) PC 3.0 W Ta = 25°C 5.0 Collector power dissipation (6-device operation) Tc = 25°C PT 25 W Isolation voltage VIsol 1000 V Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Array Configuration Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-32B1D Weight: 6.0 g (typ.) 3 2 1 R1 R2 6 4 9 11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 8 4 7 10 12 R1 R2 |
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