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SSM3J16FS 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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SSM3J16FS 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page ![]() SSM3J16FS 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16FS High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : Ron = 8 Ω (max) (@VGS = −4 V) : Ron = 12 Ω (max) (@VGS = −2.5 V) : Ron = 45 Ω (max) (@VGS = −1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V DC ID −100 Drain current Pulse IDP −200 mA Drain power dissipation (Ta = 25°C) PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2H1B D T 1 2 3 12 3 |
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