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SSM3J16FS 데이터시트(PDF) 1 Page - Toshiba Semiconductor

부품명 SSM3J16FS
상세설명  Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
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SSM3J16FS
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16FS
High Speed Switching Applications
Analog Switch Applications
• Small package
• Low on-resistance
: Ron = 8 Ω (max) (@VGS = −4 V)
: Ron = 12 Ω (max) (@VGS = −2.5 V)
: Ron = 45 Ω (max) (@VGS = −1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
−20
V
Gate-Source voltage
VGSS
±10
V
DC
ID
−100
Drain current
Pulse
IDP
−200
mA
Drain power dissipation (Ta
= 25°C)
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
D T
1
2
3
12
3


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