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MT6L77FS 데이터시트(PDF) 2 Page - Toshiba Semiconductor

부품명 MT6L77FS
상세설명  VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
PDF  3 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MT6L77FS 데이터시트(HTML) 2 Page - Toshiba Semiconductor

  MT6L77FS Datasheet HTML 1Page - Toshiba Semiconductor MT6L77FS Datasheet HTML 2Page - Toshiba Semiconductor MT6L77FS Datasheet HTML 3Page - Toshiba Semiconductor  
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MT6L77FS
2007-11-01
2
ELECTRICAL CHARACTERISTICS Q1 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
⎯
⎯
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
100
⎯
160
⎯
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
⎯
0.65
0.9
pF
Transition Frequency
fT
VCE = 1 V, IC = 5 mA
4
6
⎯
GHz
⎪S21e⎪
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
3.5
⎯
Insertion Gain
⎪S21e⎪
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
4
6.5
⎯
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz
⎯
2.4
3.2
dB
ELECTRICAL CHARACTERISTICS Q2 (Ta = 25°C)
CHARACTERISTICS
SYMBOL
C O N D I T I O N
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
⎯
⎯
0.1
μA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
0.5
μA
DC Current Gain
hFE
VCE = 1 V, IC = 5 mA
110
⎯
160
⎯
Reverse Transfer Capacitance
Cre (Note)
VCB = 1 V, IE = 0, f = 1 MHz
⎯
0.5
0.7
pF
Transition Frequency
fT
VCE = 1 V, IC = 10 mA
6.5
8.5
⎯
GHz
⎪S21e⎪
2 (1)
VCE = 1 V, IC = 10 mA, f = 2 GHz
⎯
8
⎯
Insertion Gain
⎪S21e⎪
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
8.5
10
⎯
dB
Noise Figure
NF
VCE = 1 V, IC = 10 mA, f = 2 GHz
⎯
1.2
2
dB
Note : Cre is measured by 3 terminal method capacitance bridge.
Caution
This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of
fT=60GHz class is used for this product.
Please make enough tool and equipment earthed when you handle.



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