MT6L72FS datasheet(2/3 Pages) TOSHIBA

2 / 3 page

MT6L72FS

2007-11-01

Electrical Characteristics Q1 (Ta = 25°C)

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 8 V, IE = 0

⎯

μA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

⎯

μA

DC current gain

hFE

VCE = 3 V, IC = 10 mA

⎯

140

⎯

Reverse transfer capacitance

Cre(Note)

VCB = 1 V, IE = 0, f = 1 MHz

⎯

0.21

0.4

Transition frequency

VCE = 3 V, IC = 15 mA

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 3 V, IC = 15 mA, f = 1 GHz

16.5

18.5

⎯

Insertion gain

⎪S21e⎪

2 (2)

VCE = 3 V, IC = 15 mA, f = 2 GHz

10.5

⎯

Noise figure

VCE = 3 V, IC = 3 mA, f = 2 GHz

⎯

1.3

1.8

Electrical Characteristics Q2 (Ta = 25°C)

Characteristic

Symbol

Condition

Min

Typ.

Max

Unit

Collector cutoff current

ICBO

VCB = 5 V, IE = 0

⎯

0.1

μA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

⎯

μA

DC current gain

hFE

VCE = 1 V, IC = 5 mA

100

⎯

160

⎯

Reverse transfer capacitance

Cre(Note)

VCB = 1 V, IE = 0, f = 1 MHz

⎯

0.6

0.85

Transition frequency

VCE = 1 V, IC = 5 mA

⎯

GHz

⎪S21e⎪

2 (1)

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

3.5

⎯

Insertion gain

⎪S21e⎪

2 (2)

VCE = 3 V, IC = 20 mA, f = 2 GHz

6.5

⎯

Noise figure

VCE = 1 V, IC = 5 mA, f = 2 GHz

⎯

2.4

3.2

Note: Cre is measured with a three-terminal method using a capacitance bridge.

Caution

This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before

handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the

environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers

and other objects that come into direct contact with devices should be made of antistatic materials.

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